The SAO-200LP system is designed based on a resistively heated, stacked hot plate technology to address ambient controlled, low temperature annealing applications up to 550°C. The system processes five wafers simultaneously and provides excellent process repeatability and stability at a minimum cost of ownership.

685mm (W) x 1345mm (D) x 1800mm (H)
- Vacuum Pump Included
- Monitor Space Extra

Key Benefits & Specifications:

Simple and Robust Design
Vacuum Compatible & Ambient Control
- low residual O2 (<5ppm)
- H2 or forming gas compatible
Operating Temperature Range:
- 100~550°C
Excellent Process Uniformity : <1% (1σ)
Excellent Process Repeatability: <3°C (range)
Competitive Throughput: 25wph (5 min process)
Fast Installation: 0.5 day
Process Qualification: 1 day
Minimal Maintenance: every 6 to 12 months
No Consumables
Minimal Facility Requirement
- electricity, 2 process gases, cooling water
Small Footprint: see right column
Energy Efficient: <5kW steady state, 10kW max.

Applications:

Cu Annealing
Al Sintering
H2 Annealing
SOD Annealing
Low-k Dielectrics Annealing
Polyimide Bake
SiLK Annealing
NiSi Formation and Anneal

Process Chamber Configuration

Designed Features

Unified Chamber Construction
- Load/Unload Module
- Wafer Transport Module
- Process Module
- Cooling Module
- No Process Atmosphere Isolation
Optical Bench Based Design
- Designed Leveling
- No Adjustment
Stacked Process Modules
- Productivity Enhancement
- Footprint Reduction
Limited Moving Parts
- Vacuum Robot
- Load Port Door
- Low Maintenance
High Efficiency
- Energy (~5kW)
- Process Gases
High Flexibility
Easy Installation & Start Up